august 2011 FDT86256 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FDT86256 rev. c FDT86256 n-channel powertrench ? mosfet 150 v, 1.2 a, 845 m features ? max r ds(on) = 845 m at v gs = 10 v, i d = 1.2 a ? max r ds(on) = 1280 m at v gs = 6.0 v, i d = 1.0 a ? very low qg and qgd compared to competing trench technologies ? fast switching speed ? 100% uil tested ? rohs compliant general description this n-channel mosfet is produced using fairchild semiconductor?s advanced powertrench ? process that has been especially tailored to minimi ze the on-state resistance and switching loss. g-s zener has been added to enhance esd voltage level. applications ? dc-dc conversion ? inverter ? synchronous rectifier g d s d sot-22 3 s g d d mosfet maximum ratings t a = 25 c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v ds drain to source voltage 150 v v gs gate to source voltage 20 v i d drain current -continuous (package limited) t c = 25 c 3 a -continuous (silicon limited) t c = 25 c 2.5 -continuous t a = 25 c (note 1a) 1.2 -pulsed 2 e as single pulse avalanche energy (note 3) 1 mj p d power dissipation t c = 25 c 10 w power dissipation t a = 25 c (note 1a) 2.3 t j , t stg operating and storage junction temperature range -55 to +150 c r jc thermal resistance, junction to case 12 c/w r ja thermal resistance, junction to ambient (note 1a) 55 device marking device package reel size tape width quantity 86256 FDT86256 sot-223 13 ?? 12 mm 2500 units
FDT86256 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FDT86256 rev. c electrical characteristics t j = 25 c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics symbol parameter test conditions min typ max units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v 150 v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c 100 mv/c i dss zero gate voltage drain current v ds = 120 v, v gs = 0 v 1 a i gss gate to source leakage current v gs = 20 v, v ds = 0 v 10 a v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a23.54v v gs(th) t j gate to source threshold voltage temperature coefficient i d = 250 a, referenced to 25 c -8 mv/c r ds(on) static drain to source on resistance v gs = 10 v, i d = 1.2 a 695 845 m v gs = 6 v, i d = 1.0 a 912 1280 v gs = 10 v, i d = 1.2 a, t j = 125 c 1298 1367 g fs forward transconductance v ds = 5 v, i d = 1.2 a 0.3 s c iss input capacitance v ds = 75 v, v gs = 0 v, f = 1mhz 55 73 pf c oss output capacitance 8 11 pf c rss reverse transfer capacitance 1 1.4 pf r g gate resistance 1.3 t d(on) turn-on delay time v dd = 75 v, i d = 1.2 a, v gs = 10 v, r gen = 6 2.7 10 ns t r rise time 1.7 10 ns t d(off) turn-off delay time 4.8 10 ns t f fall time 2.6 10 ns q g(tot) total gate charge v gs = 0 v to 10 v v dd = 75 v, i d = 1.2 a 1.2 2.0 nc q g(tot) total gate charge v gs = 0 v to 6 v 0.8 1.0 q gs gate to source charge 0.4 nc q gd gate to drain ?miller? charge 0.3 nc v sd source to drain diode forward voltage v gs = 0 v, i s = 1.2 a (note 2) 0.9 1.3 v v gs = 0 v, i s = 1.0 a (note 2) 0.8 1.3 t rr reverse recovery time i f = 1.2 a, di/dt = 100 a/ s 47 75 ns q rr reverse recovery charge 24 38 nc notes: 1. r ja is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r jc is guaranteed by design while r ca is determined by the user's board design. 2. pulse test: pulse width < 300 s, duty cycle < 2.0 %. 3. starting t j = 25 c, l = 3 mh, i as = 1 a, v dd = 150 v, v gs = 10 v. 4. the diode connected between gate and source serves only as protection against esd. no gate overvoltage rating is implied. 55 c/w when mounted on a 1 in 2 pad of 2 oz copper a) 118 c/w when mounted on a minimum pad of 2 oz copper b)
FDT86256 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FDT86256 rev. c typical characteristics t j = 25 c unless otherwise noted figure 1. 012345 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 6 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max v gs = 5.5 v v gs = 7 v v gs = 10 v i d , drain current (a) v ds , drain to source voltage (v) on-region characteristics figure 2. 0.00.51.01.52.02.53.03.54.0 0 1 2 3 4 v gs = 7 v v gs = 8 v pulse duration = 80 p s duty cycle = 0.5% max normalized drain to source on-resistance i d , drain current (a) v gs = 6 v v gs = 5.5 v v gs = 10 v n o r m a l i z e d o n - r e s i s t a n c e vs drain current and gate voltage f i g u r e 3 . n o r m a l i z e d o n - r e s i s t a n c e -75 -50 -25 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 i d = 1.2 a v gs = 10 v normalized drain to source on-resistance t j , junction temperature ( o c ) vs junction temperature figure 4. 5678910 0 1000 2000 3000 4000 t j = 125 o c i d = 1.2 a t j = 25 o c v gs , gate to source voltage (v) r ds(on) , drain to source on-resistance ( m : ) pulse duration = 80 p s duty cycle = 0.5% max o n - r e s i s t a n c e v s g a t e t o source voltage figure 5. transfer characteristics 2345678 0.0 0.5 1.0 1.5 2.0 t j = 25 o c t j = 150 o c v ds = 5 v pulse duration = 80 p s duty cycle = 0.5% max t j = -55 o c i d , drain current (a) v gs , gate to source voltage (v) figure 6. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 t j = -55 o c t j = 25 o c t j = 150 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) s o u r c e t o d r a i n d i o d e forward voltage vs source current
FDT86256 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FDT86256 rev. c figure 7. 0.0 0.3 0.6 0.9 1.2 0 2 4 6 8 10 i d = 1.2 a v dd = 75 v v dd = 65 v v gs , gate to source voltage (v) q g , gate charge (nc) v dd = 85 v gate charge characteristics figure 8. 0.1 1 10 100 0.5 1 10 100 f = 1 mhz v gs = 0 v capacitance (pf) v ds , drain to source voltage (v) c rss c oss c iss c a p a c i t a n c e v s d r a i n to source voltage figure 9. 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 t j = 100 o c t j = 25 o c t j = 125 o c t av , time in avalanche (ms) i as , avalanche current (a) u n c l a m p e d i n d u c t i v e switching capability figure 10. 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs = 6 v r t ja = 55 o c/w v gs = 10 v i d , drain current (a) t a , ambient temperature ( o c ) m a x i m u m c o n t i n u o u s d r a i n current vs ambient temperature f i g u r e 1 1 . f o r w a r d b i a s s a f e op erating area 0.01 0.1 1 10 100 500 0.005 0.01 0.1 1 3 10 s 100 p s 10 ms dc 1 s 100 ms 1 ms i d , drain current (a) v ds , drain to source voltage (v) this area is limited by r ds(on) single pulse t j = max rated r t ja = 118 o c/w t a = 25 o c figure 12. 10 -3 10 -2 10 -1 11 0 100 1000 0. 5 1 10 100 p (pk) , peak transient power (w) s in g le p u ls e r t ja = 118 o c /w t a = 25 o c t, p u ls e wid th (sec) single pulse maximu m power dissipation typical characteristics t j = 25 c unless otherwise noted
FDT86256 n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FDT86256 rev. c figure 13. junction-to-ambient transient thermal response curve 10 -4 10 -3 10 -2 10 -1 11 0 100 1000 0.01 0.1 1 2 single pulse r t ja = 118 o c/w duty cycle-descending order normalized thermal impedance, z t ja t rectangular pulse duration (sec) d = 0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t a typical characteristics t j = 25 c unless otherwise noted
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uhc ? ultra frfet? unifet? vcx? visualmax? xs? tm ? tm ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supp lementary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product t hat is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts ex perience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by c ountry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i55 ?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FDT86256 rev. c
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